Outputting a particular data quantization from memory

ABSTRACT

The present disclosure includes methods, devices, and systems for outputting data particular quantization of data from memory devices and systems. Outputting data particular quantization of data can include enabling a particular one of a plurality of different quantizations of data. The particular one of the plurality of quantizations of data can then be output.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.13/899,034, filed May 21, 2013, which is a Continuation of U.S.application Ser. No. 13/010,589, filed Jan. 20, 2011, which issued asU.S. Pat. No. 8,446,786 on May 21, 2013, the contents of which areincorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memorydevices, methods, and systems, and more particularly, to methods,devices, and systems for outputting a particular data quantization frommemory.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits and/or external removable devices in computers orother electronic devices. There are many different types of memoryincluding random-access memory (RAM), read only memory (ROM), dynamicrandom access memory (DRAM), synchronous dynamic random access memory(SDRAM), phase change random access memory (PCRAM), and flash memory,among others.

Flash memory devices can be utilized as volatile and non-volatile memoryfor a wide range of electronic applications. Flash memory devicestypically use a one-transistor memory cell that allows for high memorydensities, high reliability, and low power consumption. Uses for flashmemory include memory for solid state drives (SSDs), personal computers,personal digital assistants (PDAs), digital cameras, cellulartelephones, portable music players, e.g., MP3 players, and movieplayers, among other electronic devices. Data, such as program code,user data, and/or system data, such as a basic input/output system(BIOS), are typically stored in flash memory devices.

Two common types of flash memory array architectures are the “NAND” and“NOR” architectures, so called for the logical form in which the basicmemory cell configuration of each is arranged. A NAND array architecturearranges its array of memory cells in a matrix such that the controlgates of each memory cell in a “row” of the array are coupled to (and insome cases form) an access line, which is commonly referred to in theart as a “word line”. However each memory cell is not directly coupledto a data line (which is commonly referred to as a data line, e.g., abit line, in the art) by its drain. Instead, the memory cells of thearray are coupled together in series, source to drain, between a commonsource and a data line, where the memory cells commonly coupled to aparticular data line are referred to as a “column”.

Memory cells in a NAND array architecture can be programmed to a target,e.g., desired, state. For example, electric charge can be placed on orremoved from a charge storage node of a memory cell to put the cell intoone of a number of programmed states. For example, a single level cell(SLC) can represent two states, e.g., 1 or 0. Flash memory cells canalso store more than two states, e.g., 1111, 0111, 0011, 1011, 1001,0001, 0101, 1101, 1100, 0100, 0000, 1000, 1010, 0010, 0110, and 1110.Such cells can be referred to as multilevel cells (MLCs). MLCs can allowthe manufacture of higher density memories without increasing the numberof memory cells since each cell can represent more than one digit, e.g.,more than one bit. For example, a cell capable of representing fourdigits can have sixteen programmed states.

Sensing operations, e.g., read and/or program verify operations, usesensing voltages to determine the state of flash memory cells. However,a number of mechanisms, such as read disturb, program disturb, and/orcharge loss, e.g., charge leakage, can cause the stored charge on thecharge storage node, e.g., the threshold voltage (Vt), of the memorycells, to shift. Sensing operations that provide more detail about thecharge stored on a selected memory cell, e.g., soft data, can be used tohelp correct for a shifted Vt.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic diagram of a portion of a non-volatilememory array in accordance with one or more embodiments of the presentdisclosure.

FIG. 2 illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure.

FIGS. 3-5 illustrate schematic diagrams of sensing circuits inaccordance with one ore more embodiments of the present disclosure.

FIG. 6 illustrates a block diagram of an electronic memory system havinga memory device operated in accordance with one or more embodiments ofthe present disclosure.

DETAILED DESCRIPTION

The present disclosure includes methods, devices, and systems foroutputting data particular quantization of data from memory devices andsystems. Outputting data particular quantization of data can includeenabling a particular one of a plurality of different quantizations ofdata. The particular one of the plurality of quantizations of data canthen be output.

Soft data associated with a memory cell can indicate a location of athreshold voltage (Vt) of the memory cell within a Vt distributionrepresenting the target state to which the memory cell was programmed,as will be further described herein. Additionally, soft data associatedwith a memory cell can indicate a probability of whether the Vt of thememory cell corresponds to the target state to which the memory cell wasprogrammed, as will be further described herein. In contrast, data thatcorresponds to the data state a memory cell is determined to be in by asensing operation can be referred to as hard data, as will be furtherdescribed herein.

Embodiments of the present disclosure can output, e.g., selectivelyoutput, hard data without soft data to reduce I/O traffic as compared tooutputting both hard and soft data. The soft data can still be used tofacilitate accurate sensing of memory cells and can be used to adjustsensing of memory cells, e.g., a correspondence between a count providedwhile a ramping sensing signal is applied to a control gate of aselected memory cell and the hard data.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how a number of embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure.

As used herein, “a number of” something can refer to one or more suchthings. For example, a number of memory devices can refer to one or morememory devices. Additionally, the designators “N,” “M,” “P,” and “Q” asused herein, particularly with respect to reference numerals in thedrawings, indicates that a number of the particular feature sodesignated can be included with a number of embodiments of the presentdisclosure.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 348 may referenceelement “48” in FIG. 3, and a similar element may be referenced as 448in FIG. 4. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustrate theembodiments of the present disclosure, and should not be taken in alimiting sense.

FIG. 1 illustrates a schematic diagram of a portion of a non-volatilememory array 100 in accordance with one or more embodiments of thepresent disclosure. The embodiment of FIG. 1 illustrates a NANDarchitecture non-volatile memory array. However, embodiments describedherein are not limited to this example. As shown in FIG. 1, the memoryarray 100 includes access lines, e.g., word lines 105-1, . . . , 105-Nand intersecting data lines, e.g., local bit lines 107-1, 107-2, 107-3,. . . , 107-M. For ease of addressing in the digital environment, thenumber of word lines 105-1, . . . , 105-N and the number of local bitlines 107-1, 107-2, 107-3, . . . , 107-M can be some power of two, e.g.,256 word lines by 4,096 bit lines.

Memory array 100 includes NAND strings 109-1, 109-2, 109-3, . . . ,109-M. Each NAND string includes non-volatile memory cells 111-1, . . ., 111-N, each communicatively coupled to a respective word line 105-1, .. . , 105-N. Each NAND string (and its constituent memory cells) is alsoassociated with a local bit line 107-1, 107-2, 107-3, . . . , 107-M. Thenon-volatile memory cells 111-1, . . . , 111-N of each NAND string109-1, 109-2, 109-3, . . . , 109-M are connected in series source todrain between a source select gate (SGS), e.g., a field-effecttransistor (FET) 113, and a drain select gate (SGD), e.g., FET 119. Eachsource select gate 113 is configured to selectively couple a respectiveNAND string to a common source 123 responsive to a signal on sourceselect line 117, while each drain select gate 119 is configured toselectively couple a respective NAND string to a respective bit lineresponsive to a signal on drain select line 115.

As shown in the embodiment illustrated in FIG. 1, a source of sourceselect gate 113 is connected to a common source line 123. The drain ofsource select gate 113 is connected to the source of the memory cell111-1 of the corresponding NAND string 109-1. The drain of drain selectgate 119 is connected to bit line 107-1 of the corresponding NAND string109-1 at drain contact 121-1. The source of drain select gate 119 isconnected to the drain of the last memory cell 111-N, e.g., afloating-gate transistor, of the corresponding NAND string 109-1.

In one or more embodiments, construction of the non-volatile memorycells 111-1, . . . , 111-N includes a source, a drain, a floating gateor other charge storage node, and a control gate. The non-volatilememory cells 111-1, . . . , 111-N have their control gates coupled to aword line, 105-1, . . . , 105-N respectively. A “column” of thenon-volatile memory cells, 111-1, . . . , 111-N, make up the NANDstrings 109-1, 109-2, 109-3, . . . , 109-M, and are coupled to a givenlocal bit line 107-1, 107-2, 107-3, . . . , 107-M, respectively. A “row”of the non-volatile memory cells are those memory cells commonly coupledto a given word line 105-1, . . . , 105-N. The use of the terms “column”and “row” is not meant to imply a particular linear, e.g., verticaland/or horizontal, orientation of the non-volatile memory cells. A NORarray architecture would be similarly laid out, except that the stringof memory cells would be coupled in parallel between the select gates.

As one of ordinary skill in the art will appreciate, subsets of cellscoupled to a selected word line, e.g., 105-1, . . . , 105-N, can beprogrammed and/or sensed, e.g., read, together as a group. A programmingoperation, e.g., a write operation, can include applying a number ofprogram pulses, e.g., 16V-20V, to a selected word line in order toincrease the threshold voltage (Vt) of selected cells coupled to thatselected access line to a desired program voltage level corresponding toa target, e.g., desired, program state.

A sensing operation, such as a read or program verify operation, caninclude sensing a voltage and/or current change of a bit line coupled toa selected cell in order to determine the state of the selected cell.The sensing operation can involve providing a voltage to, e.g., biasing,a bit line, e.g., bit line 107-1, associated with a selected memory cellabove a voltage, e.g., bias voltage, provided to a source line, e.g.,source line 123, associated with the selected memory cell. A sensingoperation could alternatively include precharging the bit line 107-1followed with discharge when a selected cell begins to conduct, andsensing the discharge.

Sensing the state of a selected cell can include providing a number ofsensing signals, e.g., read voltages, to a selected word line whileproviding a number of pass signals, e.g., read pass voltages, to theword lines coupled to the unselected cells of the string sufficient toplace the unselected cells in a conducting state independent of thethreshold voltage of the unselected cells. The bit line corresponding tothe selected cell being read and/or verified can be sensed to determinewhether or not the selected cell conducts in response to the particularsensing voltage applied to the selected word line. For example, thestate of a selected cell can be determined by the word line voltage atwhich the bit line current reaches a particular reference currentassociated with a particular state.

As one of ordinary skill in the art will appreciate, in a sensingoperation performed on a selected memory cell in a NAND string, theunselected memory cells of the string are biased so as to be in aconducting state. In such a sensing operation, the state of the selectedcell can be determined based on the current and/or voltage sensed on thebit line corresponding to the string. For instance, the state of theselected cell can be determined based on whether the bit line currentchanges by a particular amount or reaches a particular level in a giventime period.

When the selected cell is in a conductive state, current flows betweenthe source line contact at one end of the string and a bit line contactat the other end of the string. As such, the current associated withsensing the selected cell is carried through each of the other cells inthe string, the diffused regions between cell stacks, and the selecttransistors.

FIG. 2 illustrates a block diagram of a memory architecture inaccordance with one or more embodiments of the present disclosure. Theembodiment of FIG. 2 illustrates a number of pages, 225-1, 225-2, . . ., 225-P, included in Block 1, 203-1. FIG. 2 also illustrates a number ofblocks 203-1, 203-2, . . . , 203-Q. According to the embodimentillustrated in FIG. 2, blocks 203-1, 203-2, . . . , 203-Q together areincluded in plane 201. Embodiments are not limited to memory devicesincluding one plane, as memory devices may include one plane or morethan one plane. Only one plane 201 is illustrated in FIG. 2 so as not toobscure the teachings of the present disclosure.

As an example, a 2 GB memory device can include 2112 bytes of data perpage, 64 pages per block, and 2048 blocks per plane. SLC devices storeone bit per cell. MLC devices can store multiple bits per cell, e.g., 2bits per cell. In a binary system, a “bit” represents one unit of data.As embodiments are not limited to a binary system, the smallest dataelement may be referred to herein as a “unit.”

Plane 201 is shown in bidirectional communication with register 230 at236 and 238. As one of ordinary skill in the art will appreciate, datacan be transferred from register 230 to the memory plane 201 at 236during programming operations. Data can also be transferred from thememory plane 201 to the register 230 during reading operations. Register230 can output data to input/output (I/O) circuitry, e.g., 660 in FIG.6, at 234 and can receive data from I/O circuitry at 232. In someembodiments of the present disclosure hard data can be output to I/Ocircuitry without outputting soft data, however embodiments are not solimited. For example, some embodiments can include outputting hard dataand soft data, e.g., varying the amount of soft data output with harddata. Register 230 can communicate data with I/O circuitry through anumber of data cycles. By way of example, a page of data, e.g., 2kilobytes (kB) of data, can be loaded into register 230 through a numberof 1 byte data cycles. Embodiments are not limited to memory devicesincluding a 2 kB page size. Other page sizes can be used withembodiments of the present disclosure, e.g., 4 kB, 8 kB, etc. As thereader will appreciate, a partial page of data can be communicated toand/or from register 230.

Although FIG. 2 illustrates only one register 230 in association withthe plane 201, embodiments are not so limited. In some embodiments, aplane 201 can include more than one register, such as a data registerand a cache register. A data register can operate in an analogousfashion to register 230, as described above, in that it can transferdata to memory plane 201 and receive data from the memory plane 201. Acache register can operate in an analogous fashion to register 230, asdescribed above, in that it can communicate data to and/or from I/Ocircuitry through a number of data cycles, e.g., data input cycles ordata output cycles. In some embodiments, a register 230 can include anumber of latches, where a latch can store one or more units of data.

For those embodiments including both a data register and a cacheregister, during non-cache operations, the data register and cacheregister can operate together as a single register, e.g., as register230. During cache operations, data register and cache register canoperate separately in a pipelined process. For example, during a programoperation, data from I/O circuitry, e.g., from a host (for instance,from a processor associated with the host), can be loaded into the cacheregister, e.g., through a number of serially clocked data cycles, andthen transferred from the cache register to the data register. Afterdata is transferred to the data register, the contents of the dataregister can be programmed into memory plane 201. In an example readoperation, data, e.g., hard data and soft data, can be read from memoryplane 201 into data register. In another example read operation, harddata without soft data can be transferred from memory plane 201 into thedata register. Whether the data register is loaded with hard data orhard data and soft data, the data in the data register can betransferred to the cache register. Whether the cache register is loadedwith hard data or hard data and soft data, according to the presentdisclosure, hard data only, or hard data and soft data can be output toI/O circuitry. Such embodiments can be beneficial in improving a readbandwidth by reducing I/O traffic when soft data (or not as much softdata) is not needed or desired, as compared to outputting the hard datawith the soft data to the I/O circuitry according to some previousapproaches. For example, outputting hard data without soft data canreduce I/O traffic by 65%.

FIG. 3 illustrates a schematic diagram of a portion of a memory devicein accordance with one ore more embodiments of the present disclosure.The portion of the memory device is illustrated in a reduced level ofdetail to facilitate explanation of embodiments of the presentdisclosure. As such, a portion of a memory device can include additionalcomponents not illustrated in FIG. 3.

The portion of the memory device illustrated in FIG. 3 can include amemory array 300, e.g., analogous to memory array 100 illustrated inFIG. 1, and additional components that are collectively referred to ascontrol circuitry, e.g., analogous to the control circuitry 670illustrated in FIG. 6. The memory array 300 can represent a portion,e.g., a block, of a larger memory array. For example, a number ofportions of the larger memory array can share a row decoder 344 and anumber of portions of the larger memory array can share a column decoder346, however embodiments are not so limited. Although the array 300represents a portion of a larger array, it is referred to herein as anarray 300 for ease of notation.

The control circuitry can include a row decoder 344 and a column decoder346 coupled to the memory array 300. For example, the row decoder 344and/or the column decoder 346 can be multiplexers and/or demultiplexers.The row decoder 344 can be coupled to a number of access lines of thememory array 300 and the column decoder 346 can be coupled to a numberof data lines of the memory array 300. The row decoder 344 can select aparticular access line and the column decoder can select a particulardata line to facilitate selecting a particular memory cell coupled toeach of the particular access line and the particular data line forprogramming and/or sensing the memory cell. For those embodiments inwhich the memory array 300 is a NAND array, memory cells within thearray 300 can be programmed and/or sensed a page at a time, as describedherein, e.g., a number of cells coupled to the particular access linecan be programmed and/or sensed together. However, sensing operationsmay be described herein with respect to a single memory cell in order topromote understanding of the present disclosure.

The control circuitry can include a sensing signal generator 342, e.g.,a voltage ramp generator, a current ramp generator, etc. The sensingsignal generator can have an output to the row decoder 344 for applyingthe sensing signal to a control gate of a selected memory cell, e.g.,via an access line coupled to the control gate of the a selected memorycell. The sensing signal generator can have an output to a counter 348to provide a count, e.g., an n-unit value, while the sensing signal isapplied to the control gate of the a selected memory cell. The use ofthe designators “m,” “n,” and “p” with respect to the count areunrelated to the designators “M,” “N,” “P,” and “Q” with respect to thedrawings. The numbers represented by these designators can be the sameor different.

The sensing signal generator 342 can be a ramping sensing signalgenerator, such as one that can increase a magnitude of an output, e.g.,a voltage, in accordance with a linear slope from a starting magnitudeto a stopping magnitude in a period of time. The starting and stoppingmagnitudes can be selected to encompass a range of threshold voltages towhich memory cells in the array 300 can be programmed, e.g., 0.5 voltsto 4.5 volts. In this manner, the magnitude of the output can providesensing capability for any program state of a selected memory cell witha single input, e.g., as opposed to using multiple discrete sensingsignals, e.g., discrete voltages, to determine the state of the selectedmemory cell. The period of ramping can be selected to balance efficientsensing speeds with accurate detection of a threshold voltage (Vt). Inone or more embodiments, the period can be less than 20 microseconds.

In one or more embodiments, the sensing signal generator 342 can providean output to the counter 348 to start the count. The counter 348 canstart a count and count over a particular range of values while thesensing signal is applied to the control gate of the selected memorycell. The counter can start at a first particular value and count up toa second particular value, e.g., from 00h to FFh (0-255). In one or moreembodiments, the counter 348 can be incremented over the particularrange at fixed clock cycles. The count can comprise an n-unit value. Insome embodiments, the counter 348 can be a binary counter and the countcan be an n-bit binary value. For example, if the count is equal to adecimal value of 251, and the counter 348 is a binary counter, the countcan comprise an n-bit value, e.g., 8-bit value, equal to Ser. No.11/111,011 in binary. Embodiments are not limited to a particular numberof units for the count.

The count can include more units than are used to represent a data stateof the selected memory cell. For example, if the selected memory cell isa O-bit cell, then the combinations of different data states can berepresented in binary with a 4-unit, e.g., 4-bit, count, such as 1011.However, as stated, the count includes more units than are used torepresent the data state of the memory cell. Thus, for the example of a4-bit memory cell, the count can include at least 5 units, e.g., bits.That is, the count includes a more unit than the number of units used torepresent a data state of the memory cell. The units of the countnominally representing the data state of the memory cell are referred toas hard data. For example, a 5-bit count of 10101 may in some cases bedetermined to correspond to a data state of 1011, although the 5-bitcount nominally represented a data state of 1010, e.g., the four mostsignificant bits of the 5-bit count. The remaining units of the countare referred to as soft data, although the count may include additionalunits that are neither hard data, nor soft data, e.g., “dummy units.”However, for ease of notation, these additional units are not includedin the discussion of the n-unit count as described herein. Notationally,the count is an n-unit count including m-units of nominal hard data andp-units of soft data, where m+p=n and where each of m and p are lessthan n. In the example of an 8-bit count for a 4-bit memory cell, thecount includes 8 total bits with 4 bits of nominal hard data (nominallyrepresenting the data state of the memory cell) and 4 bits of soft data,e.g., n is equal to 8, m is equal to 4 and p is equal to 4.

A 2-bit memory cell can have possible data states of 00, 01, 10, and 11.The 2-bit memory cell could be sensed with a ramping sensing signal anda counter configured to provide a count with no soft data, e.g., a counthaving a number of units equal to the number of units in the data stateof the memory cell, which in this example is 2 bits. Thus, the countercould count 00, 01, 10, 11 at fixed clock cycles as the ramping sensingsignal is applied to the control gate of the memory cell. However, asdescribed herein, providing a count that allows for soft data can bebeneficial in sensing memory cells because the soft data can be used toaccount for variations in Vt ranges of memory cells, e.g., thevariations in the ranges of the amount of charge stored on a chargestorage node of the memory cells corresponding to a particular datastate. According to one or more embodiments of the present disclosure,the counter 348 can be incremented such that the count changes by morethan one increment between each data state. In the example of the 2-bitcell, a 4-bit count could be used such that the counts 0000, 0001, 0010,0011, 0100, could be counted while the sensing signal ramps from valuescorresponding to the data state of 00 to values corresponding to thedata state of 01, e.g., the two most significant bits of the 4-bitcount. However, as described herein, particularly with respect to thetrims 354, embodiments of the present disclosure are not limited torepresenting hard data with the most significant bits of the count.Furthermore, embodiments are not limited to any particularcorrespondence between the count and the value associated with a datastate.

The soft data, e.g., extra units of the count, can provide more detailedinformation on the amount of charge stored in the memory cell. Forexample, if the 2-bit memory cell was programmed to a target data stateof 01, if a 4-bit count of 0100 indicates an “exact” data state of 01,and if the count is latched as the memory cell begins to conduct atleast partially in response to the ramping sensing signal being appliedto its control gate, then a latched 4-bit count of 0011 can indicatethat the memory cell has slightly less charge than the targeted amountcorresponding to data state 01, and a latched 4-bit count of 0101 canindicate that the memory cell has slightly more charge than the targetedamount corresponding to data state 01. Soft data, either for aparticular memory cell, or cumulatively over a number of memory cells,can be used to adjust sensing operations to account for changes in theamount of charge stored in memory cells for a corresponding data stateto improve the accuracy of later sensing operations. For example, errorcorrection code (ECC) can be used with the soft data to correct datareceived from a sensing operation that may have been inaccurate due tovariations in the amount of charge stored in one or more memory cells.

The Vt of a memory cell can change, e.g., shift, over time due to anumber of mechanisms. For example, the charge storage node, e.g.,floating gate, of the memory cell may lose charge over time. That is,charge may leak from the charge storage node. Such charge loss can causethe Vt of the cell to change, e.g., decrease. Additionally, as thememory cell undergoes programming and/or sensing operations over time,program disturb and/or read disturb mechanisms may cause the Vt of thecell to change, e.g., increase. Other mechanisms can also cause the Vtof the memory cell to change over time, as will be appreciated by one ofordinary skill in the art.

In some instances, such a Vt change can alter the state of the memorycell. For example, if the memory cell were programmed to a target state,e.g., data state 01, charge loss could cause the Vt of the memory cellto decrease to a level less than the target state, or possibly to alevel within a lower data state, e.g., data state 00. Accordingly, sucha Vt change can result in erroneous data being sensed during a sensingoperation performed on the memory cell.

The counter 348 can have an output to logic 352. For example, the logic352 can be a combinational logic block, e.g., combination logic,including a number of logic gates. In one or more embodiments, the logic352 can include approximately 200 gates. The logic 352 can be configuredto convert the count provided by the counter 348 from a firstquantization n to a second quantization m. For example, the logic 352can be configured to convert the count from an n-unit value to an m-unitvalue, where the m-unit value might comprise only the hard data, andwhere m is less than n. For those embodiments in which the counter 348is a binary counter, the n-unit value can be an n-bit binary value andthe logic 352 can be configured to covert the n-bit binary value to anm-bit binary value, which might only correspond to the hard data, forexample. For example, an 8-bit count of Ser. No. 10/011,110 could beconverted to a 4-bit hard data value of 1010 by the logic 352. The logic352 can convert the count continuously “on the fly” as it is provided tothe logic 352 by the counter 348, so that when the sensing circuitry 351detects that the selected memory cell conducts, the latches 353 canlatch the converted value. Such conversion functionality of the logic352 can be selectively enabled as described herein such that the logic352 can either convert the count to corresponding hard data without softdata, or pass all n units of the count to the latches 353. In someembodiments, the latches 353 can be included in a register, e.g.,register 230 illustrated in FIG. 2.

The logic 352 can include one or more trims 354 configured to adjust theconversion between the first quantization, e.g., the n-unit count, andthe second quantization, e.g., the m-units of hard data. For example,the trims 354 can be set by a user or automatically by control circuitryto adjust the conversion between the count and the hard data. A range ofn-unit counts can be converted to a particular m-unit hard data state.Each range can be adjusted by the trims 354, including a boundary foreach corresponding hard data state, e.g., a lower-most n-unit value ofthe count that corresponds to a particular hard data state, a width ofthe range, e.g., the number of different n-unit counts that fall withinthe range, and/or endpoints of the range, e.g., a numerically first anda numerically last n-unit count that define the endpoints of the range.For example, a 2-bit data state of 01 can correspond to a range of 4-bitcounts from 0011 to 0110, where the width of the range and the endpointscan be adjusted, e.g., set, by the trims 354. The conversion between then-unit count and the m-units of hard data can be adjusted according tothe p-units of soft data within the n-unit count.

Because soft data can indicate a location of a Vt within a Vtdistribution and/or a probability of whether a Vt corresponds to atarget state, soft data can be used to track and/or compensate for a Vtchange. For example, more bits of hard data obtained from a readoperation may be correctable if the hard data is read using an adjusted,e.g., trimmed, conversion between the count and the hard data statesbased on soft data than if the hard data is read using an unadjustedcount or a count adjusted according to some previous approaches.Additionally, hard data read using a trimmed conversion may becorrectable for a longer period of time, e.g., a greater number ofprogram and erase cycles. That is, a longer period of time, e.g., agreater number of program and erase cycles, may pass until the trimmedconversion needs to be trimmed again due to an additional Vt shift.

The control circuitry can be configured to store the soft data. Forexample, the control circuitry can include memory, e.g., DRAM (notspecifically illustrated) that stores the soft data. The memory can beused exclusively to store soft data, or the memory can store additionaldata along with soft data. Subsequent, e.g., future, adjustments of theconversion between the count and the output data, e.g., hard data can beadjusted based, at least partially, on the stored soft data.

The logic 352 can include an input 356 to selectively enable the logic352. When the logic 352 is enabled, it can function to convert the countfrom an n-unit quantization of data to an m-unit quantization of data,e.g., corresponding to just the hard data as described herein. When thelogic 352 is not enabled, the count, e.g., including hard data and softdata, can be output to the latches 353. The logic 352 can convert thecount from an n-unit quantization of data to one of a plurality oflevels of data quantization, e.g., levels of data quantization from m ton. The one of the plurality of levels can be selected, e.g., by a useror by control circuitry automatically. In some embodiments, the one ofthe plurality of levels can be selected based on an age of the memorydevice. For example, the logic 352 can be enabled early in the life of amemory device before ECC becomes more necessary. For example, an age ofa memory device can be determined with reference to a number ofprogram-erase cycles of the memory device, where a greater numberindicates an older age. As will be appreciated, as a memory device ages,the Vt for various states may begin to shift. As these shifts becomemore significant, the extra information from the count, e.g., soft data,may be more useful to the memory device to correct for a Vt shift, andthus the logic 352 may be selectively disabled. As described herein, thelogic 352 can be selectively enabled and/or disabled by a command, e.g.,a user command and/or a command from control circuitry.

Although the sensing circuitry 351 is illustrated separate from thecolumn decoder 346, in one or more embodiments, the sensing circuitry351 can be incorporated with the column decoder 346. Likewise, thelatches 353 and/or a register including the latches 353 can beincorporated with the sensing circuitry 351 and/or the column decoder346. The term “sensing circuitry” is used generally herein to refer toone or more of the column decoder 346, the sensing circuitry 351, aregister, e.g., register 230 illustrated in FIG. 2, and/or the latches353. In some embodiments the sensing circuitry 351 can include one ormore sense amplifiers. When the sensing circuitry 351, e.g., a senseamplifier, trips, it can indicate to that a selected memory cell hasreacted to input from the ramping sensing signal generator byconducting, e.g., that a state of the selected memory cell has beensensed.

The sensing circuitry 351 can output a signal to the latches 353 tocause the latches to latch a quantization of data, such as that providedeither from the counter 348, e.g., the n-unit count, when the logic 352is not enabled by the enable input 356, or a particular m-unitquantization of the data, e.g., just the hard data, from the logic 352when the logic 352 is selectively enabled by the enable input 356. Thelatches 353 can include a number of individual data latches, where eachof the individual data latches can store one unit of data, e.g., a bit.In one or more embodiments, the latches 353 can include at leastn-number of latches, corresponding to the n-unit count. The latches 353can latch an m-unit value from the logic 352 at least partially inresponse to the ramping sensing signal causing the selected memory cellto conduct prior to the hard data being output when the logic 352 isselectively enabled by the enable input 356. The latches 353 can latchthe quantization of data provided from the logic 352, e.g., whether itis an n-unit quantization, and m-unit quantization, or some otherparticular quantization.

According to the present disclosure, the sensing circuitry 351 can causea particular quantization of data, e.g., hard data only, the n-unitcount, or an m-unit quantization of data that includes some soft data,but not all p-units of the soft data, at least partially in response tothe ramping sensing signal causing the selected memory cell to conduct.In one or more embodiments, the sensing circuitry can be configured tooutput m-units of hard data from the n-number of latches. The output 334can be analogous to the output 234 illustrated in FIG. 2 and/or to theI/O circuitry 660 and/or the I/O connections 662 illustrated in FIG. 6.

FIG. 4 illustrates a schematic diagram of a portion of a memory devicein accordance with one ore more embodiments of the present disclosure.The portion of the memory device is illustrated in a reduced level ofdetail to facilitate explanation of embodiments of the presentdisclosure. As such, a portion of a memory device can include additionalcomponents not illustrated in FIG. 4.

The portion of the memory device illustrated in FIG. 4 can include anumber of components analogous to those illustrated in FIG. 3. Forexample, memory array 400, row decoder 444, column decoder 446, sensingcircuitry 451, latches 453, output 434, ramping sensing signal generator442, counter 448, logic 452, trims 454, and enable input 456 can beanalogous to memory array 300, row decoder 344, column decoder 346,sensing circuitry 351, latches 353, output 334, ramping sensing signalgenerator 342, counter 348, logic 352, trims 354, and enable input 356illustrated in FIG. 3, respectively. Accordingly, with respect to FIG.4, primarily the differences in connectivity and functionality will bedescribed.

The ramping sensing signal generator 442 can have an output to the rowdecoder 444 (and thus to the control gates of memory cells therein,e.g., via a number of access lines) and to the counter 448. The counter448 can have an output to sensing circuitry, e.g., latches 453, andinput from logic 452, in contrast to FIG. 3, where the counter 348 hadan output to the logic 352. The counter 448 can be configured to providea first quantization of data, e.g., an n-unit count, while the rampingsensing signal is applied to the control gate of a selected memory cellwithin the array of memory cells 400.

The logic 452, e.g., a state machine, can be configured to control thecount provided by the counter 448 such that the count can provide aparticular quantization of data, such as hard data and all soft data,hard data and some soft data, or hard data without soft data. Forexample, the counter 448 can be a binary counter and the logic 452 can,e.g., selectively, control the counter 448 to increment the count inbinary increments corresponding to hard data states as controlled by thelogic 452. More specifically, the counter 448 can be configured toprovide an n-unit count, as described above with respect to counter 348,however, the logic 452 can be configured to control the count such thatit increments in m-unit values corresponding to hard data states, thus,when enabled, m-units of hard data are output from the counter 448 tothe latches 453 at least partially in response to the ramping sensingsignal causing the selected memory cell to conduct. For example, thecount can be controlled such that it increments from Ser. No. 00/000,000to Ser. No. 00/010,000 to Ser. No. 00/100,000, and so on. The logic 452can control the counter 448 such that the controller 448 only outputsthe m-number of most significant bits (MSBs), e.g., trimmed MSBs whenenabled, from the counter to the latches 453. For example, a data pathbetween the counter 448 and latches 453 can be such that the output ofthe counter 448 is serial starting with the MSBs, and, thus, the logic452 can stop the output from the counter 448 after m-number of bits. Thelogic 452 can include one or more trims 454 configured to adjust theincrementation, e.g., binary increments, and the hard data states asdescribed herein. For example, the trims 454 can adjust the change incount, e.g., incrementation, such that there is asymmetry between datastates, e.g., such that different hard data states correspond todifferent relative increments. Accordingly, one or more embodiments ofthe present disclosure can include a downcounter (not specificallyillustrated) to adjust the count negatively in response to a negative Vtshift. However, embodiments are not so limited, as the logic 452 canadjust the count negatively without the use of a downcounter. Theasymmetric correspondence can be further adjusted using the trims 454,e.g., in response to different Vt shifts for different hard data statesas described herein. The logic 452 can include an enable input 456 toselectively enable the logic 452 to control the count as describedherein.

Although the sensing circuitry 451 is illustrated as being separate fromthe column decoder 446, in one or more embodiments, the sensingcircuitry 451 can be incorporated with the column decoder 446. Likewise,the latches 453 can be incorporated with the sensing circuitry 451, aregister, and/or the column decoder 446. The term “sensing circuitry” isused generally herein to refer to one or more of the column decoder 446,the sensing circuitry 451, and/or the latches 453. The sensing circuitrycan be configured to output the, e.g., selectively, controlled count atleast partially in response to the ramping sensing signal causing theselected memory cell to conduct. For example, the sensing circuitry 451can output the count from the latches 453 through the output 434. Thelatches 453 can include at least n-number of individual latches, eachable to store one unit of data. The sensing circuitry can be configuredto output, for example, m-number of units of hard data without softdata, e.g., where the logic 452 controls the counter 448 to increment inm-unit values and output m-unit values to the latches 453, at leastpartially in response to the ramping sensing signal causing the selectedmemory cell to conduct.

FIG. 5 illustrates a schematic diagram of a portion of a memory devicein accordance with one ore more embodiments of the present disclosure.The portion of the memory device is illustrated in a reduced level ofdetail to facilitate explanation of embodiments of the presentdisclosure. As such, a portion of a memory device can include additionalcomponents not illustrated in FIG. 5.

The portion of the memory device illustrated in FIG. 5 can include anumber of components analogous to those illustrated in FIG. 3. Forexample, memory array 500, row decoder 544, column decoder 546, sensingcircuitry 551, latches 553, output 534, ramping sensing signal generator542, counter 548, logic 552, trims 554, and enable input 556 can beanalogous to memory array 300, row decoder 344, column decoder 346,sensing circuitry 351, latches 353, output 334, ramping sensing signalgenerator 342, counter 348, logic 352, trims 354, and enable input 356illustrated in FIG. 3, respectively. Accordingly, with respect to FIG.5, primarily the differences in connectivity and functionality will bedescribed.

The ramping sensing signal generator can have an output to the rowdecoder 544 (and thus to the control gates of memory cells therein,e.g., via a number of access lines) and to the counter 548. The counter548 can have an output to sensing circuitry, e.g., latches 553. Thecounter 548 can be configured to provide a first quantization of data,e.g., an n-unit count, while the ramping sensing signal is applied tothe control gate of a selected memory cell within the array of memorycells 500. The sensing circuitry, e.g., latches 553 can have an outputto logic 552, e.g., in contrast to FIG. 3, where the logic 352 receivedan input from the counter 348 and had an output to the latches 353. Thesensing circuitry can be configured to output the count to the logic 552at least partially in response to the ramping sensing signal causing theselected memory cell to conduct.

Although the sensing circuitry 551 is illustrated separate from thecolumn decoder 546, in one or more embodiments, the sensing circuitry551 can be incorporated with the column decoder 546. Likewise, thelatches 553 can be incorporated with the sensing circuitry 551 and/orthe column decoder 546. The term “sensing circuitry” is used generallyherein to refer to one or more of the column decoder 546, the sensingcircuitry 551, and/or the latches 553.

The logic 552, e.g., a combinational logic block including combinationlogic, can be configured to, e.g., selectively, convert the count from afirst quantization of data, e.g., an n-unit count, to a secondquantization of data, e.g., m-units of hard data. For example, the countcan be an n-unit value including p-units of soft data. The logic 552 canbe configured to convert the n-unit value to an m-unit value comprisingthe hard data, where m and p are each less than n. The latches 553 caninclude at least n-number of latches configured to store the n-unitvalue from the counter 548. The logic 552 can include one or more trims554 configured to adjust the conversion between the first quantizationand the second quantization as described herein. For example, the logic552 can be configured to adjust the conversion between the count and thehard data using the one or more trims 554 according to the p-units ofsoft data stored in the at least n-number of latches 553. The logic 552can reconvert the count (or other quantization of data) to hard data (orother quantization of data) corresponding to the adjusted conversionwithout the ramping sensing signal being output to the control gate ofthe selected memory cell again. Such embodiments can provide for a fast“re-read” without actually accessing the memory cell again, which canreduce wear on the memory cell and provide for faster output. The logic552 can include an enable input 556 to selectively enable the logic 552to convert the count as described herein.

FIG. 6 illustrates a block diagram of an electronic memory system 602having a memory device 606 operated in accordance with one or moreembodiments of the present disclosure. The memory system 602 includes ahost 604, e.g., a processor, a computing device including one or moreprocessors, an application specific integrated circuit (ASIC), etc.,coupled to the memory device 606. The memory device 606 includes amemory array 600. The memory array 600 can be analogous to the memoryarray 100 previously described in connection with FIG. 1. Although onememory array 600 is shown in FIG. 6, embodiments of the presentdisclosure are not so limited, e.g., the memory device 606 can includemore than one memory array 600.

The memory device 606 includes an array 600 of memory cells, which canbe floating gate flash memory cells with a NAND architecture, aspreviously described herein. The control circuitry 670 includes addresscircuitry 640 to latch address signals provided over I/O connections 662through I/O circuitry 660. Address signals are received and decoded by arow decoder 644 and a column decoder 646 to access the memory array 600.In light of the present disclosure, it will be appreciated by thoseskilled in the art that the number of address input connections dependson the density and architecture of the memory array 600 and that thenumber of addresses increases with both increased numbers of memorycells and increased numbers of memory blocks and arrays.

The memory device 606 includes control circuitry 670 coupled to thememory array 600. The control circuitry 670 can be configured to apply aramping sensing signal to a control gate of a selected memory cell fromthe memory array 600 and to provide a count while the ramping sensingsignal is applied to the control gate of the selected memory cell. Thecontrol circuitry 670 can be configured to convert a count to aparticular quantization of data, e.g., m-units of hard data, and/or tocontrol the count such that the count provides a particular quantizationof data, e.g., m-units of soft hard data. The control circuitry 670 canbe configured to output the particular quantization of data, e.g.,through I/O circuitry 660.

The control circuitry 670 can sense data in the memory array 600 bysensing voltage and/or current changes in the memory array columns usingsensing circuitry that in this embodiment can be read/latch circuitry650. The read/latch circuitry 650 can read and latch a page, e.g., arow, of data from the memory array 600. I/O circuitry 660 is includedfor bi-directional data communication over the I/O connections 662 withthe host 604. Write circuitry 655 is included to write data to thememory array 600.

The control circuitry 670 decodes signals provided by controlconnections 664 from the host 604. These signals can include chipsignals, write enable signals, and address latch signals that are usedto control the operations on the memory array 600, including datasensing, data write, and data erase operations, as described herein. Inone or more embodiments, the control circuitry 670 is responsible forexecuting instructions from the host 604 to perform the operationsaccording to embodiments of the present disclosure. The controlcircuitry 670 can be a state machine, a sequencer, or some other type ofcontroller. It will be appreciated by those skilled in the art thatadditional circuitry and control signals can be provided, and that thememory device detail of FIG. 6 has been reduced to facilitate ease ofillustration.

CONCLUSION

The present disclosure includes methods, devices, and systems foroutputting data particular quantization of data from memory devices andsystems. Outputting data particular quantization of data can includeenabling a particular one of a plurality of different quantizations ofdata. The particular one of the plurality of quantizations of data canthen be output.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of a number of embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of ordinary skill in the artupon reviewing the above description. The scope of a number ofembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofa number of embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

PROGRAM LISTING

The following is an example of a program listing in register transferlanguage (RTL) for adjusting a conversion between a first quantizationof data and a second quantization of data for a 3-bit memory cell designusing an 8-bit count (where the first quantization is the 8-bit countand the second quantization is a 3-bit quantization).

‘timescale 1ns / 100ps module quantization_nbit (/*AUTOARG*/  // Outputs count_out,  // Inputs  count_in, trim01, trim12, trim23, trim34,trim45, trim56, trim67,  lowvcc_, read_clk  ); //inputs //data bus inputlowvcc_; input read_clk; input [7:0] count in; // input data from thecounter input [7:0] trim01; // this trim defines L0-> L1 boundary inbinary input [7:0] trim12; // this trim defines L1-> L2 boundary inbinary input [7:0] trim23; // this trim defines L2-> L3 boundary inbinary input [7:0] trim34; // this trim defines L3-> L4 boundary inbinary input [7:0] trim45; // this trim defines L4-> L5 boundary inbinary input [7:0] trim56; // this trim defines L5-> L6 boundary inbinary input [7:0] trim67; // this trim defines L6-> L7 boundary inbinary //output data bus Output [2:0]    count out; // this is the MSBbinary count to sense amps reg [2:0] count out., always @ (negedgeread_clk or negedge lowvcc_) begin  if (~ lowvcc_) count_out <= 3'h000; else  if (count_in < trim01) count_out <= 3'b000;  else  if ((count_in > trim01) && (count_in <= trim12) ) count_out <= 3'b001;  else if ( (count_in > triml2) && (count_in <= trim23) ) count_out <= 3'b010; else  if ( (count_in > trim23) && (count_in <= trim34) ) count_out <=3'b011;  else  if ( (count_in > trim34) && (count_in <= trim45) )count_out <= 3'b100;  else  if ( (count_in > trim45) && (count_in <=trim56) ) count_out <= 3'b101;  else  if ( (count_in > trim56) &&(count_in <= trim67) ) count_out <= 3'b110;  else  if ( (count_in >trim67) ) count_out <= 3'b111;  else count_out <= count_out; end /*always @ (*) begin  if (count_in < trim01) count_out = 3'b000;  else  if( (count_in > trim01) && (count_in <= trim12) ) count_out = 3’b001; else  if ( (count_in > trim12) && (count_in <= trim23) ) count_out =3’b010;  else  if ( (count_in > trim23) && (count_in <= trim34) )count_out = 3’b011;  else  if ( (count_in > trim34) && (count_in <=trim45) ) count_out = 3’b100;  else  if ( (count_in > trim45) &&(count_in <= trim56) ) count_out = 3’b101;  else  if ( (count_in >trim56) && (count_in <= trim67) ) count_out = 3’b110;  else  if ((count_in > trim67) ) count_out = 3’b111;  else count_out = ‘3b000; end*/ endmodule

1-20. (canceled)
 21. A method of operating memory, comprising:outputting a first quantization of data in a first control mode at leastpartially in response to a sensing signal causing a selected memory cellto conduct, wherein the first quantization of data represents a numberof units of hard data; and outputting a second quantization of data in asecond control mode at least partially in response to the sensing signalcausing the selected memory cell to conduct, wherein the secondquantization of data represents the number of units of hard data and aparticular number of units of soft data.
 22. The method of claim 21,wherein the method includes selecting either the first control mode orthe second control mode.
 23. The method of claim 21, wherein the firstquantization of data further represents a second number of units of softdata that is different than the particular number of units of soft data.24. The method of claim 21, wherein the particular number of units ofsoft data is greater than the second number of units of soft data. 25.The method of claim 21, wherein the method includes outputting a thirdquantization of data in a third control mode, wherein the thirdquantization of data represents the number of units of hard data and athird number of units of soft data.
 26. A method of operating memory,comprising: applying a sensing signal to a selected memory cell;providing a count while the sensing signal is applied to the selectedmemory cell; converting the count to a particular quantization of data,or controlling the count such that the count corresponds to theparticular quantization of data; and outputting the particularquantization of data at least partially in response to the sensingsignal causing the selected memory cell to conduct, wherein theparticular quantization of data represents a number of units of harddata and a number of units of soft data.
 27. The method of claim 26,wherein the method includes adjusting the conversion between the countand the particular quantization of data by setting a trim for convertingthe count to the particular quantization of data.
 28. The method ofclaim 26, wherein converting the count comprises selectively convertingthe count at least partially in response to being enabled to convert thecount.
 29. The method of claim 26, wherein the method includesasymmetrically incrementing the count.
 30. The method of claim 29,wherein the method includes adjusting the asymmetric incrementing.
 31. Amemory device, comprising: an array of memory cells; and controlcircuitry coupled to the array and configured to: apply a sensing signalto a selected memory cell; provide a count while the sensing signal isapplied to the selected memory cell; convert the count to a particularquantization of data, or control the count such that the countcorresponds to the particular quantization of data; and output theparticular quantization of data at least partially in response to thesensing signal causing the selected memory cell to conduct, wherein theparticular quantization of data represents a number of units of harddata and a number of units of soft data.
 32. The memory device of claim31, wherein the control circuitry is configured to output the particularquantization of data at least partially in response to the sensingsignal causing the selected memory cell to conduct.
 33. The memorydevice of claim 31, wherein the control circuitry is configured to:selectively convert the count to the particular quantization of data;and output the particular quantization of data or output the count. 34.The memory device of claim 31, wherein the control circuitry is furtherconfigured to adjust the conversion between the count and the particularquantization.
 35. A memory device, comprising: an array of memory cells;a counter configured to provide a count while a sensing signal is outputto a selected memory cell within the array of memory cells; logicconfigured to convert the count such that the count provides aparticular quantization of data, wherein the particular quantization ofdata represents a number of units of hard data; and sensing circuitryconfigured to output the particular quantization of data at leastpartially in response to the sensing signal causing the selected memorycell to conduct.
 36. The memory device of claim 35, wherein the logicincludes a trim configured to adjust incrementation of the count. 37.The memory device of claim 35, wherein the logic includes a trimconfigured to adjust decrementation of the count.
 38. The memory deviceof claim 35, wherein the logic includes an input to selectively enablethe logic.
 39. A memory device, comprising: an array of memory cells; acounter configured to provide a count while a sensing signal is outputto a selected memory cell within the array of memory cells, wherein thecount provides a first quantization of data that represents first numberof units of hard data and a number of units of soft data; logicconfigured to convert the count such that the count provides a secondquantization of data, wherein the second quantization of data representsa second number of units of hard data; and sensing circuitry configuredto output the second quantization of data at least partially in responseto the sensing signal causing the selected memory cell to conduct. 40.The memory device of claim 39, wherein the logic includes a trimconfigured to adjust the conversion between the first number of units ofhard data and the number of units of soft data and the second number ofunits of hard data.